Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Medium high voltage MOS transistorDescription: STMICROELECTRONICS STD6N65M2 Power Field Effect Transistor, MOSFET, N-channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V34305+$4.993725+$4.623850+$4.3648100+$4.2539500+$4.17992500+$4.08745000+$4.050410000+$3.9949 -
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Category: Medium high voltage MOS transistorDescription: INFINEON SPD07N60C3ATMA1 Power Field Effect Transistor, MOSFET, N-channel, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V74015+$3.865125+$3.578850+$3.3783100+$3.2925500+$3.23522500+$3.16365000+$3.135010000+$3.0920 -
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Category: Medium high voltage MOS transistorDescription: N Channel MOSFET, E-series, low quality factor, Vishay Semiconductor Vishay E-series MOSFET power supply is a high-voltage transistor with ultra-low maximum on resistance, low sensitivity value, and fast switching function. They provide various current ratings. Typical applications include servers and telecommunications power supplies, LED lighting, flyback converters, power factor correction (PFC), and switch mode power supplies (SMPS). ###Features: Low sensitivity value (FOM) RDS (on) x Qg, low input capacitance (Ciss), low on resistance (RDS (on)), ultra-low gate charge (Qg), fast switching, reduced switching and conduction losses # # MOSFET transistor, Vishay Semiconductor962510+$11.6424100+$11.0603500+$10.67221000+$10.65282000+$10.57525000+$10.47827500+$10.400510000+$10.3617 -
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Category: Medium high voltage MOS transistorDescription: ROHM R6011ENJTL Power Field Effect Transistor, MOSFET, N-channel, 11 A, 600 V, 0.34 ohm, 10 V, 4 V New76815+$19.656050+$18.8160200+$18.3456500+$18.22801000+$18.11042500+$17.97605000+$17.89207500+$17.8080 -
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Category: Medium high voltage MOS transistorDescription: INFINEON SPB17N80C3ATMA1 Power Field Effect Transistor, MOSFET, N-channel, 17 A, 800 V, 0.25 ohm, 10 V, 3 V15145+$17.256350+$16.5189200+$16.1059500+$16.00271000+$15.89942500+$15.78145000+$15.70777500+$15.6339 -
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Category: Medium high voltage MOS transistorDescription: STMICROELECTRONICS STB28N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V new13625+$14.612150+$13.9877200+$13.6380500+$13.55061000+$13.46312500+$13.36325000+$13.30087500+$13.2383 -
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Category: Medium high voltage MOS transistorDescription: STMICROELECTRONICS STB33N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V new49395+$26.913550+$25.7634200+$25.1193500+$24.95831000+$24.79722500+$24.61325000+$24.49827500+$24.3832 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPN60R1K0CEATMA1 Power Field Effect Transistor, MOSFET, N-channel, 6.8 A, 600 V, 0.9 ohm, 10 V, 3 V New23225+$2.972725+$2.752550+$2.5984100+$2.5323500+$2.48832500+$2.43325000+$2.411210000+$2.3782 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPN60R1K5CEATMA1 Power Field Effect Transistor, MOSFET, N-channel, 5 A, 600 V, 1.35 ohm, 10 V, 3 V New85585+$1.958925+$1.813850+$1.7122100+$1.6687500+$1.63962500+$1.60345000+$1.588810000+$1.5671 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPN70R1K5CEATMA1 Power Field Effect Transistor, MOSFET, N-channel, 5.4 A, 700 V, 1.35 ohm, 10 V, 3 V New47745+$1.663225+$1.540050+$1.4538100+$1.4168500+$1.39222500+$1.36145000+$1.349010000+$1.3306 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPL60R299CPAUMA1 Power Field Effect Transistor, MOSFET, N-channel, 11.1 A, 600 V, 0.27 ohm, 10 V, 3 V271310+$9.2232100+$8.7620500+$8.45461000+$8.43922000+$8.37775000+$8.30097500+$8.239410000+$8.2086 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPD60R450E6ATMA1 Power Field Effect Transistor, MOSFET, N-channel, 9.2 A, 600 V, 0.41 ohm, 10 V, 3 V278110+$7.9716100+$7.5730500+$7.30731000+$7.29402000+$7.24095000+$7.17447500+$7.121310000+$7.0947 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPD65R225C7ATMA1 Power Field Effect Transistor, MOSFET, N-channel, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V363710+$8.6196100+$8.1886500+$7.90131000+$7.88692000+$7.82955000+$7.75767500+$7.700210000+$7.6714 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB60R380C6ATMA1 Power Field Effect Transistor, MOSFET, N-channel, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V96935+$6.713625+$6.216350+$5.8681100+$5.7190500+$5.61952500+$5.49525000+$5.445410000+$5.3708 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB60R099C6ATMA1 Power Field Effect Transistor, MOSFET, N-channel, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V32905+$28.360850+$27.1488200+$26.4701500+$26.30041000+$26.13072500+$25.93685000+$25.81567500+$25.6944 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQD1N60CTM Power Field Effect Transistor, MOSFET, N-channel, 1A, 600 V, 9.3 ohm, 10 V, 2 V56405+$2.756725+$2.552550+$2.4096100+$2.3483500+$2.30752500+$2.25645000+$2.236010000+$2.2054 -
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Category: Medium high voltage MOS transistorDescription: GENESIC SEMICONDUCTOR GA10JT12-263 Silicon carbide crystal tube, 1.2KV, 10A, TO-26381631+$114.655010+$109.6700100+$108.7727250+$108.0748500+$106.97811000+$106.47962500+$105.78175000+$105.1835 -
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Category: Medium high voltage MOS transistorDescription: INFINEON BSP135 L6327 Power Field Effect Transistor, MOSFET, N-channel, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V5779 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB60R299CPATMA1 Power Field Effect Transistor, MOSFET, N-channel, 11 A, 650 V, 0.27 ohm, 10 V, 3 V746410+$8.7504100+$8.3129500+$8.02121000+$8.00662000+$7.94835000+$7.87547500+$7.817010000+$7.7879 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB60R199CPATMA1 Power Field Effect Transistor, MOSFET, N-channel, 16 A, 650 V, 0.18 ohm, 10 V, 3 V76741+$47.623910+$44.8914100+$42.8615250+$42.5492500+$42.23701000+$41.88562500+$41.57335000+$41.3782 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB65R660CFDATMA1 Power Field Effect Transistor, MOSFET, N-channel, 6 A, 650 V, 0.594 ohm, 10 V, 4 V884510+$6.9144100+$6.5687500+$6.33821000+$6.32672000+$6.28065000+$6.22307500+$6.176910000+$6.1538 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPD60R950C6ATMA1 Power Field Effect Transistor, MOSFET, N-channel, 5.7 A, 650 V, 0.68 ohm, 10 V, 3 V99995+$3.326425+$3.080050+$2.9075100+$2.8336500+$2.78432500+$2.72275000+$2.698110000+$2.6611 -
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Category: Medium high voltage MOS transistorDescription: ROHM R6007ENJTL Power Field Effect Transistor, MOSFET, N-channel, 7 A, 600 V, 0.57 ohm, 10 V, 4 V New4466 -
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Category: Medium high voltage MOS transistorDescription: ROHM R6011KNJTL Power Field Effect Transistor, MOSFET, N-channel, 11 A, 600 V, 0.34 ohm, 10 V, 5 V New7289 -
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Category: Medium high voltage MOS transistorDescription: ROHM R6007KNJTL Power Field Effect Transistor, MOSFET, N-channel, 7 A, 600 V, 0.57 ohm, 10 V, 5 V New7751 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB60R099CPATMA1 Power Field Effect Transistor, MOSFET, N-channel, 31 A, 650 V, 0.09 ohm, 10 V, 3 V1122 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCB070N65S3 功率场效应管, MOSFET, N沟道, 44 A, 650 V, 0.062 ohm, 10 V, 4.5 V 新5567 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQD1N80TM Power Field Effect Transistor, MOSFET, N-channel, 1 A, 800 V, 15.5 ohm, 10 V, 5 V5249 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB65R110CFDATMA1 功率场效应管, MOSFET, N沟道, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V2572 -
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Category: Medium high voltage MOS transistorDescription: INFINEON BSS225 L6327 功率场效应管, MOSFET, N沟道, 90 mA, 600 V, 28 ohm, 10 V, 1.9 V1725
